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Which risk increases when silicon crystals contain impurities?

A)Increased avalanche breakdown susceptibility
B)Decreased thermal runaway resistance
C)Increased minority carrier lifetime
D)Decreased electron mobility effects

💡 Explanation

Avalanche breakdown susceptibility increases because, with impurities, impact ionization gains dominance at lower voltages, therefore breakdown occurs sooner rather than intrinsic material threshold; this is due to increased carrier concentrations.

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