Which risk increases when the insulating oxide layer thins excessively in a Flash EEPROM cell?

💡 Explanation

Data corruption rises because reduced oxide thickness increases the probability of quantum tunneling; stored electrons leak from the floating gate. Therefore, the data retention time decreases, rather than the transistor properties failing because of thermal effects.

• Which outcome results when an industrial ammonia synthesis reactor reaches equilibrium?
• Which consequence results when strontium-90 undergoes beta decay in bone?
• Which consequence results when thermal stress causes a laser crystal's birefringence to vary spatially?
• Which mechanism causes constructive reinforcement in fibre optic cables?
• Which consequence results when inertial mass decreases near blackholes?
• Which outcome occurs within a Carnot refrigerator operating irreversibly?