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Which risk increases when thermal cycling causes grain boundary migration in polycrystalline silicon crystals?

A)Increased dislocation climb velocity
B)Decreased piezoelectric coefficient
C)Enhanced creep crack propagation
D)Reduced resonant frequency stability

💡 Explanation

Enhanced creep crack propagation occurs because grain boundary migration increases intergranular stress, initiating microvoids. Therefore, continuous stress causes crack formation and propagation rather than dislocation climb because dislocations are largely temperature independent below certain temperatures.

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