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Which risk increases when thermal cycling of polycrystalline silicon occurs in photovoltaic cells?

A)Increased grain boundary electron scattering
B)Increased bulk recombination lifetime
C)Reduced optical bandgap energy level
D)Reduced reverse saturation current density

💡 Explanation

Increased grain boundary electron scattering appears because thermal cycling induces stress, leading to grain boundary migration, therefore increasing electron trapping at these boundaries, rather than increasing bulk lifetime or change to bandgap energy or saturation current.

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