Which risk increases when thermally stressing a Zener diode?

💡 Explanation

Increased temperature causes enhanced electron-hole pair generation within the depletion region of the diode; this increases the minority carrier concentration via thermal generation, therefore, reverse leakage current spikes rather than threshold shifts, because thermal runaway dominates over bulk characteristics

• Which consequence results when incorrect guard band spacing impacts orthogonal frequency-division multiplexing?
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