Which risk increases within semiconductor devices using narrower channels?

💡 Explanation

Gate oxide electron tunneling becomes more prominent as channel lengths decrease because the insulating layer becomes very thin, therefore electrons can quantum tunnel, rather than being blocked; increased electron tunneling leads to leakage currents.

• Which phenomenon causes lower short-circuit current in amorphous silicon solar cells, rather than crystalline cells?
• Which mechanism causes increased chain stiffness in polymers above $T_g$?
• Which mechanism allows hydrogen fluoride to etch silicon dioxide in semiconductor manufacturing?
• Which mechanism causes reduced catalytic activity when transition metal catalysts form ligands with strong delocalized pi orbitals?
• Which inefficiency increases when a Carnot engine's temperature difference shrinks?
• Which outcome regarding spacetime geometry results when adding mass to a neutron star near the Tolman–Oppenheimer–Volkoff limit?