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Which risk significantly increases when parasitic capacitance affects gate-drive MOSFET voltage?

A)Shoot-through current dramatically increases
B)Thermal runaway diminishes gradually
C)Gate threshold voltage rises slowly
D)Input reverse-recovery oscillation decreases

💡 Explanation

Shoot-through develops because parasitic capacitance allows spurious MOSFET turn-on, resulting in a direct path between supply rails via an uncontrolled current; therefore, the current increases intensely under transient conditions, rather than slowly or in the reverse direction.

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