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Which risk significantly increases when the controlled cooling in crystalline silicon boule production fails during Czochralski pulling?

A)Ferromagnetic domain alignment emerges
B)Photovoltaic efficiency improves sharply
C)Large-scale twinning defect formation
D)Critical temperature stabilization occurs

💡 Explanation

Twinning increases due to non-equilibrium crystal growth. The improper thermal gradients cause planar defects through the mechanism of twin boundary formation, because the atoms don't settle at equilibrium; therefore twinning emerges, rather than uniform crystal growth.

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