Which risk significantly increases when the energy band gap in a semiconductor-based sensor narrows unexpectedly?

💡 Explanation

Runaway thermal carrier generation becomes more likely, triggered by reduced band gap energy requiring less energy to excite electrons to the conduction band, creating more electron-hole pairs through thermal excitation because of lower energy threshold; therefore, this outcome is much more probable rather than different tunneling probabilities or ionic contamination, where these mechanisms aren't primary consequences from changes in it’s gap size.

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