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Which risk significantly increases when the junction temperature in a silicon-based transistor approaches its absolute limit?

A)Enhanced gate oxide quantum tunneling
B)Increased electron cold cathode emission
C)Substrate electron-hole pair recombination
D)Augmented channel hot-electron injection

💡 Explanation

Enhanced gate oxide quantum tunneling occurs because high temperatures reduce the potential barrier width, therefore electron tunneling probability increases exponentially, rather than cold emission. This leads to increased leakage and device instability different at high temps.

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