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Which risk to a semiconductor's integrity increases when electrons experience sustained high field effects?

A)Electromigration weakens metallic interconnects
B)Dielectric breakdown causes gate shorts
C)Thermal runaway creates hotspots
D)Over-doping decreases carrier mobility

💡 Explanation

Sustained high fields can accelerate electrons leading to impact ionization. This impact generates electron-hole pairs that damage to the gate dielectric, leading to dielectric breakdown because the growing conductive paths short the gate, therefore disrupting function, rather than thermal instability or metal migration.

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