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Which transport effect reduces transistor channel conductivity when interface traps increase?

A)Fermi level pinning narrows bands
B)Umklapp scattering increases dramatically
C)Impact ionization creates hot carriers
D)Quantum tunneling dominates resistance

💡 Explanation

Fermi level pinning increases trap occupancy, therefore forming depletion regions that narrow conduction bands near interfaces, because increased traps reduce the effective channel area for carrier transport rather than increase any scattering effects.

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