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Which undesirable outcome significantly increases when reverse-biasing a semiconductor junction beyond its rated voltage?

A)Avalanche breakdown
B)Thermal carrier drift
C)Photovoltaic backflow
D)Capacitive depletion lag

💡 Explanation

Reaching the reverse voltage limit causes a significant increase in the electric field within the depletion region, leading to *avalanche breakdown*, because accelerated electrons gain enough energy to ionize atoms. Therefore, destructive current surges occur rather than controlled operation due to reaching the breakdown threshold.

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