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Which unintended consequence can appear when MOSFETs experience sustained, high electric fields?

A)Hot carrier injection degradation
B)Latch-up in parasitic bipolar transistors
C)Gate oxide breakdown acceleration
D)Channel length modulation increase

💡 Explanation

Hot carrier injection causes threshold voltage shifts because high-energy electrons or holes are injected into the gate oxide, thereby altering the charge distribution. Therefore, the MOSFET parameters degrade, rather than exhibiting breakdown or latch-up at a macroscopic scale.

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