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Within a silicon-germanium alloy transistor, which effect results when the Ge concentration varies, causing dissimilar energy levels?

A)Thermionic emission increases sharply
B)Band gap narrowing occurs locally
C)Minority carrier injection reverses
D)Avalanche multiplication is amplified

💡 Explanation

Band gap narrowing occurs because the variable Ge concentration alters the Si-Ge bonds, thus changing energy levels; therefore, affecting electron mobility rather than thermionic emission. This gradient in composition rather than simple changes amplifies tunneling.

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