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Within a silicon photovoltaic cell, which mechanism reduces electron-hole recombination at grain boundaries in polycrystalline material?

A)Passivation via hydrogen incorporation
B)Increased cell operating temperature
C)Application of reverse bias voltage
D)Decreasing photon flux intensity

💡 Explanation

Passivation with hydrogen reduces electron-hole recombination at grain boundaries because it saturates dangling bonds, thereby removing energy states within the band gaps which would otherwise trap carriers, therefore reducing electron-hole recombination rather than enhancing it at these imperfections.

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