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Which consequence arises when SRAM transistors shrink below threshold?

A)Increased bit errors during read
B)Reduced static power dissipation
C)Improved write speed margins
D)Enhanced data retention under voltage

💡 Explanation

Increased bit errors occur due to gate oxide tunneling becoming more significant because thinner insulators allow electrons to pass through, therefore higher leakage and random flips occur, rather than stable behavior which lowers reliability as temperatures increase.

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