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Which consequence results when doping silicon with boron?

A)Increased hole carrier concentration results
B)Increased electron mobility in the lattice
C)Reduced material conductivity occurs instead
D)Decreased depletion region width results

💡 Explanation

Doping silicon with boron increases the hole concentration because boron acts as an acceptor; thus, it introduces holes via the hole-electron generation mechanism in the valence band. Therefore, more holes exist, rather than fewer, because electrons pair with the dopant.

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