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Which consequence results when electron wavefunctions overlap in flash memory?

A)Charge leakage affects data retention
B)Write times increase linearly
C)Thermal runaway quickly degrades oxide
D)Increased read errors saturate capacity

💡 Explanation

Charge leakage increases because quantum tunneling allows electrons to pass through the insulating oxide layer, even when there's insufficient energy. Therefore, data retention diminishes rather than increased write times because electron energy is not changed.

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