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Which consequence results when exceeding gate oxide electric field strength?

A)Dielectric breakdown and current leakage
B)Increased transistor switching efficiency
C)Reduced channel mobility in transistor
D)Enhanced capacitive charge storage properties

💡 Explanation

Dielectric breakdown occurs because exceeding the gate oxide's electric field leads to impact ionization, surpassing its insulating capacity resulting in current leakage. This destructive outcome occurs rather than enhanced performance alternatives because the oxide fails under extreme stress.

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