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Which effect on crystal microstructure results when exceeding electromigration limits in a semiconductor?

A)Intrinsic carrier concentration will decrease
B)Void formation disrupts current flow
C)Substrate doping concentration fluctuations arise
D)Thermal runaway causes gate dielectric breakdown

💡 Explanation

Void formation occurs because electromigration displaces metal ions in the crystal microstructure due to high current density, creating vacancies that coalesce into voids; therefore void disrupts current rather than changes to carrier concentration because electromigration directly affects material structure not bulk properties.

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