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Which electrical overstress event causes dielectric breakdown within a MOSFET junction?

A)Excessive gate-source voltage level
B)High substrate doping concentration
C)Increased channel length modulation
D)Elevated operating saturation temperature

💡 Explanation

Dielectric breakdown occurs because exceeding the gate-source voltage causes the gate oxide to experience an electric field beyond its breakdown strength. This is dielectric breakdown, therefore, the gate ruptures rather than the channel failing or temperature being the primary factor.

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