VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesTechnologyQuestion
Question
Technology

Which failure mode is most likely in SiC Schottky diodes when reverse blocking voltage increases rapidly?

A)Thermal runaway dominates locally
B)Avalanche breakdown becomes symmetric
C)Minority carrier injection increases
D)Recombination current becomes negligible

💡 Explanation

Local thermal runaway is likely because inhomogeneous current distribution worsens with fast-changing blocking voltages due to the positive temperature coefficient; therefore, the diode can fail from overheating rather than uniform avalanche breakdown across its area.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Technology