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← TechnologyWhich failure mode is most likely in SiC Schottky diodes when reverse blocking voltage increases rapidly?
A)Thermal runaway dominates locally✓
B)Avalanche breakdown becomes symmetric
C)Minority carrier injection increases
D)Recombination current becomes negligible
💡 Explanation
Local thermal runaway is likely because inhomogeneous current distribution worsens with fast-changing blocking voltages due to the positive temperature coefficient; therefore, the diode can fail from overheating rather than uniform avalanche breakdown across its area.
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