Which mechanism causes increased drain current in nanoscale MOSFETs?

💡 Explanation

Quantum tunneling causes gate leakage in nanoscale MOSFETs because the gate oxide width is thin enough for electrons to tunnel through, therefore increased drain current results from electrons appearing where they should not, rather than resistance effects predominating.

• Which consequence results when a chemical reactor exceeds threshold temperature?
• Upon silicon doping, which effect enables tunneling in microprocessors?
• Which outcome occurs when a signal frequency approaches the Bragg condition within a fiber-optic cable?
• Which consequence results when radiative forcing exceeds emission in planetary climate?
• Which outcome occurs when a pressurized hydrogen tank on a fuel cell vehicle experiences rapid depressurization?
• Which consequence results when an electron encounters a sharply narrowing constriction within a semiconductor channel?