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Which mechanism causes increased electron mobility in graphene-oxide FET sensors at elevated temperatures?

A)Enhanced thermal electron hopping
B)Increased phonon scattering events
C)Reduced surface defect recombination
D)Increased gate dielectric capacitance

💡 Explanation

Increased thermal energy excites electrons by enhanced thermal electron hopping, allowing easier movement between localized states. This increases the overall electron mobility because thermal hops promote conduction, rather than trapping or recombination at defects.

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