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Which mechanism causes increased semiconductor resistance when impurities alter crystal lattice orbitals?

A)Electron scattering lowers carrier mobility
B)Increased dopant concentration lowers bandgap
C)Phonon interference reduces thermal conductivity
D)Auger recombination shortens carrier lifetime

💡 Explanation

When lattice orbitals are altered by impurities, electron scattering occurs because the periodic potential of the crystal lattice is disrupted, thus reducing carrier mobility and increasing resistance. Therefore electron scattering increases resistance, rather than bandgap reduction, thermal conductivity changes, or altered carrier lifetime, which depend on different mechanisms.

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