Which mechanism dominates when electrons pass silicon dioxide in flash memory?

💡 Explanation

Electrons cross the thin insulating layer via Fowler-Nordheim tunneling because a high electric field reduces the barrier width, therefore electrons tunnel rather than overcome the barrier thermally because the potential difference is primarily quantum mechanical.

• Which outcome results when dopants disrupt crystal lattices?
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• Which mechanism initiates total resistance collapse during quench?
• Which mechanism widens the band gap within strained silicon?
• Which effect results when a microscopic channel restricts viscous fluid flow?