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Which mechanism limits electron mobility within the gate oxide of a MOSFET during operation?

A)Phonon scattering from lattice vibrations
B)Quantum tunneling through potential barriers
C)Surface plasmon resonance due to impurities
D)Cherenkov radiation from high velocity electrons

💡 Explanation

As gate oxides become extremely thin, quantum tunneling occurs because electrons have a finite probability of passing through the potential barrier, limiting the gate's control. Therefore quantum tunneling results because electrons act as waves penetrating energy barrier, rather than scattering, plasmon resonance, or Cherenkov emission; which have different requirements.

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