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Which outcome arises when elevated gate-source voltage impacts MOSFET performance?

A)Gate-oxide dielectric breakdown occurs.
B)Increased sub-threshold leakage appears.
C)Channel length modulation decreases linearly.
D)Reduced short-channel effects manifest gradually.

💡 Explanation

Gate-to-source over-voltage accelerates Fowler-Nordheim tunneling through the MOSFET's thin gate oxide. Because excessive charge tunnels, it causes dielectric breakdown, therefore permanent damage occurs, rather than performance degradation or channel modulation changes.

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