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Which outcome can occur when a semiconductor's band gap changes during laser annealing?

A)Increased short-circuit current density
B)Increased reverse saturation current
C)Reduced built-in potential voltage
D)Reduced output quantum efficiency

💡 Explanation

A band gap decrease caused by transient changes during laser annealing increases electron-hole pair generation via Photoluminescence; therefore, the short-circuit current density increases, because more carriers are available, rather than reduced quantum efficiency.

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