Which outcome follows increased gate voltage in FETs due to quantum mechanics?

💡 Explanation

Increased gate voltage enhances the electric field and thus increase electron QUANTUM TUNNELING through the gate oxide because electrons leak through the thin oxide layer rather than traditional channel conduction; therefore, leakage increases, rather than a clean on/off switch.

• Which outcome arises from isothermally compressing a Carnot heat engine working fluid beyond minimum volume at constant temperature?
• Which perceptual effect results from the equivalence principle?
• Which outcome results when doping disrupts a silicon crystal?
• Which outcome results in a flash memory cell when Fowler-Nordheim tunneling is suppressed?
• Which risk increases when a photovoltaic cell experiences significant lattice strain?
• Which gravitational effect increases from extreme stellar density?