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Which outcome happens at silicon's surface via dangling bonds?

A)Increased surface state recombination velocity
B)Reduced oxide layer tunneling probability
C)Enhanced electron-hole plasma confinement
D)Decreased plasmon resonance energy transfer

💡 Explanation

Increased surface recombination is a result, because unterminated silicon atoms create surface energy states increasing Shockley-Read-Hall recombination. This outcome rather than quantum confinement, occurs as these dangling bonds introduce defects; therefore SRH model appropriately explains the outcome.

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