Which outcome happens when stray electromagnetic radiation induces a voltage exceeding a MOS capacitor’s gate oxide breakdown voltage?

💡 Explanation

When induced gate voltage transcends the breakdown voltage, dielectric breakdown happens because localized intense electric field causes irreversible rupture within the oxide layer, forming a conductive, leakage path. Therefore permanent shorting occurs, preventing normal operation rather than latch-up, leakage current which require different failure conditions.

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