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Which outcome is observed within solid-state drives because of quantum tunneling?

A)Bit flips corrupt stored data
B)Increased write speeds are enabled
C)Reduced power consumption occurs overall
D)Thermal runaway causes rapid failure

💡 Explanation

Bit flips occur due to electrons tunneling through the insulating barrier of flash memory cells, leading to unintentional changes in stored data because the electron escapes the intended location via Quantum Tunneling. This is not beneficial; therefore it causes degradation rather than faster writes or reduced power as these require intentional processes.

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