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Which outcome limits transistor density when quantum mechanical models are applied to MOS structures?

A)Increased gate oxide tunneling current
B)Enhanced electron-phonon scattering rate
C)Reduced electrostatic dielectric screening
D)Increased channel hot carrier injection

💡 Explanation

Increased gate oxide tunneling current limits further scaling because electrons penetrate the gate dielectric via quantum tunneling, which increases off-state leakage and power consumption within the channel, rather than other scattering effects.

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