Which outcome occurs due to quantum tunneling across the oxide layer in a flash memory cell when programmed?

💡 Explanation

When a flash memory cell is programmed, electrons tunnel through the gate oxide layer due to high electric fields because of quantum mechanical tunneling, increasing electrons on the floating gate. Therefore increased threshold voltage occurs, rather than reduced capacitance, decreased retention, or higher power, which depend on different physical mechanisms inside the cell.

• Which outcome regarding signal shape occurs because asynchronous data streams use Fourier transforms?
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