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Which outcome occurs during the Czochralski process if the crystal growth rate exceeds thermal diffusion?

A)Increased point defect concentration
B)Uniform dopant distribution achieved
C)Improved crystal lattice periodicity
D)Enhanced substrate-seed crystal bonding

💡 Explanation

Increased point defect concentration will occur because rapid growth prevents atoms from reaching equilibrium lattice positions, leading to Frenkel and Schottky defects. Therefore point defect concentration increases rather than improved periodicity which would require slower annealing.

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