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← ScienceWhich outcome occurs during the fabrication of nanoscale flash memory devices due to excessively thin insulating layers?
A)Charge leakage accelerates data decay✓
B)Channel resistance drastically increases
C)Threshold voltage becomes more stable
D)Device speed greatly increases
💡 Explanation
Charge leakage increases because quantum tunneling allows electrons to pass through the thin insulating layer, therefore data retention degrades rapidly, rather than resistance increase or voltage stabilization which require charge isolation.
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