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← TechnologyWhich outcome occurs on a gallium arsenide (GaAs) MESFET when the gate-source voltage exceeds the avalanche breakdown limit?
A)Increased gate leakage current✓
B)Decreased channel conductivity
C)Enhanced electron mobility
D)Stable output signal amplification
💡 Explanation
Increased gate leakage current occurs because impact ionization, the chief part of avalanche breakdown, generates electron-hole pairs. This increases the reverse gate current therefore causing leakage rather than changing conductivity or mobility and definitely not stable amplification.
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