Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich outcome occurs when a gallium arsenide (GaAs) semiconductor experiences increased temperature nearing its intrinsic carrier concentration?
A)Thermal runaway and device destruction✓
B)Increased electron mobility in the channel
C)Reduced gate capacitance in MOSFETs
D)Enhanced piezoelectric resonant properties exhibited
💡 Explanation
Thermal runaway causes device destruction because increasing temperature elevates intrinsic carrier concentration. This increases conductivity, leading to more heat due to Joule heating effect, therefore thermal runaway occurs rather than increased electron mobility at lower temperatures.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which outcome occurs when exceeding the Short Circuit Current Rating (SCCR) of an industrial control panel system?
- Which outcome generally occurs when stiction impairments limit a hydrostatic actuator control?
- Which outcome occurs when fast-switching solenoid valve actuation causes hydraulic resonance?
- Which mechanism counteracts bending moments via embedded tendons?
- Which behavior arises when a PID controller's integral term excessively accumulates error in a robotic arm?
- Which risk increases when reciprocating HVAC compressor inlet valve fails to fully close?