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Which outcome occurs when a high-energy electron approaches a MOSFET gate insulator?

A)Gate oxide dielectric breakdown risk increases
B)Channel mobility reaches saturation velocity
C)Threshold voltage shifts to lower values
D)Substrate doping concentration becomes enhanced

💡 Explanation

Dielectric breakdown can occur because impact ionization introduces defects into the gate oxide within the MOSFET; therefore gate oxide breakdown risk increases—rather than channel saturation—because electric field stress amplifies the defect generation.

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