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Which outcome occurs when a MOSFET's gate breakdown threshold is exceeded?

A)Dielectric breakdown and permanent failure
B)Increased on-resistance, reduced current
C)Subthreshold leakage increases negligibly
D)Increased switching speed temporarily occurs

💡 Explanation

Exceeding the gate oxide's permissible voltage causes dielectric breakdown because exceeding its strength leads to irreversible conduction pathways through the gate insulator, therefore causing permanent MOSFET failure rather than temporary increase in speed or manageable on-resistance changes.

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