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← ScienceWhich outcome occurs when a strong magnetic field interferes with spintronic magnetoresistive RAM (MRAM)?
A)Data corruption due to magnetization switching✓
B)Reduced read speeds from suppressed tunneling
C)Device failure via dielectric breakdown
D)Increased power consumption magnetic saturation
💡 Explanation
When a strong external magnetic field interferes, the magnetization direction within the MRAM's magnetic tunnel junction switches spuriously because the field overcomes pinning energy, leading to unintended bit flips and data corruption. Therefore data corruption results, rather than speed reduction, breakdown, or power increase, which would require different failure mechanisms.
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