Which outcome occurs when amorphous silicon undergoes laser-induced phase transition during solar cell manufacturing?

💡 Explanation

When amorphous silicon absorbs laser energy, thermal annealing causes crystallization via grain growth because atoms gain sufficient energy to overcome potential barriers, leading to larger, more ordered grains and increased carrier mobility. Therefore, grain sizes increase for higher mobility, rather than reduced band gap, enhanced defects or decreased carrier lifetime which require alternative processes.

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