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Which outcome occurs when an aluminum interconnect on a silicon die experiences significant electromigration?

A)Increased resistance forms open circuits
B)Junction leakage leads to latch-up
C)Substrate doping shifts to p-type
D)Gate oxide breakdown becomes negligible

💡 Explanation

Electromigration displaces metal ions because of momentum transfer from conducting electrons (wind force) resulting in voids; therefore, increased resistance culminating in open circuits occurs rather than junction or substrate effects because those are separate effects.

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