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Which outcome occurs when applying excessive reverse voltage to a semiconductor diode?

A)Increased forward current conduction occurs
B)Dielectric breakdown and component failure
C)Increased capacitance across depletion region
D)Increased minority carrier recombination rate

💡 Explanation

Applying excessive reverse voltage leads to dielectric breakdown because the electric field across the depletion region becomes too strong, therefore causing insulation failure, rather than increased conduction, capacitance, or recombination, which are influenced by other factors.

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