Which outcome occurs when energy applied by voltage meets an electron within a reverse-biased semiconductor?

💡 Explanation

Applying a voltage large enough enables tunneling despite the barrier width. Though there are changes to the depletion region voltage causes very shallow increase of minority carrier potential barrier reduction, therefore electrons quantum-tunnel through to neutralize, giving sharp I/V, rather than thermal heating.

• Which mechanism explains increased electron mobility when a silicon crystal lattice has reduced defects?
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• Which outcome occurs when applying reverse bias to a semiconductor?
• Which outcome reduces fringe contrast on coated optics?
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