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Which outcome occurs when excessive lattice defects distort silicon's conduction band edge?

A)Lower electron mobility results
B)Increased piezoelectricity is observed
C)Higher critical temperature reached
D)Suppressed thermoelectric power observed

💡 Explanation

Reduced electron mobility results because increased defects leads to enhanced electron scattering via deformation potential scattering at the distorted conduction band edge. Therefore, mobility decreases, rather than alternative electrical effects occurring, because scattering dominates the conduction process.

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