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Which outcome occurs when graphite experiences high temperature plasma etching in semiconductor fabrication?

A)Formation of volatile carbon fluorides
B)Amorphous carbon recrystallization into diamond
C)Intercalation compound formation with etchants
D)Graphitic oxide layer inhibiting further etching

💡 Explanation

When graphite is exposed to high temperature plasma etching, reactive fluorine radicals abstract carbon atoms, forming volatile carbon fluorides because the covalent carbon-carbon bonds in graphite are broken. Therefore, volatile carbon fluorides are formed, rather than recrystallization, intercalation, or oxidation which require different thermodynamic conditions or presence of other reactants.

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