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Which outcome occurs when impurities raise Fermi energy in N-doped semiconductor’s orbitals?

A)Lowered electron hole recombination rates
B)Increased free electron carrier density
C)Decreased semiconductor junction barrier width
D)Enhanced core ionization energy threshold

💡 Explanation

Increased Fermi energy increases electron population because higher energy levels become occupied, and thus band filling occurs, leading to increases in free electron carrier concentration, therefore doping increases conductivity, rather than influencing core ionization or hole recombination.

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